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| PD - 91600A IRG4BC20K INSULATED GATE BIPOLAR TRANSISTOR Features * High short circuit rating optimized for motor control, tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V * Combines low conduction losses with high switching speed * Latest generation design provides tighter parameter distribution and higher efficiency than previous generations C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.27V @VGE = 15V, IC = 9.0A n-channel Benefits * As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT * Latest generation 4 IGBTs offer highest power density motor controls possible * This part replaces the IRGBC20K and IRGBC20M devices TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM tsc VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 600 16 9.0 32 32 10 20 29 60 24 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A s V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. --- 0.5 --- 2.0 (0.07) Max. 2.1 --- 80 --- Units C/W g (oz) www.irf.com 1 4/24/2000 IRG4BC20K Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(ON) VGE(th) VGE(th)/TJ gfe ICES IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 -- -- V VGE = 0V, IC = 250A Emitter-to-Collector Breakdown Voltage T 18 -- -- V VGE = 0V, IC = 1.0A Temperature Coeff. of Breakdown Voltage -- 0.49 -- V/C VGE = 0V, IC = 1.0mA -- 2.00 -- IC = 6.0A VGE = 15V -- 2.27 2.8 IC = 9.0A Collector-to-Emitter Saturation Voltage V -- 3.01 -- IC = 16A See Fig.2, 5 -- 2.43 -- IC = 9.0A , TJ = 150C Gate Threshold Voltage 3.0 -- 6.0 VCE = VGE, IC = 250A Temperature Coeff. of Threshold Voltage -- -10 -- mV/C VCE = VGE, IC = 250A Forward Transconductance U 2.9 4.3 -- S VCE = 100 V, IC = 9.0A -- -- 250 VGE = 0V, VCE = 600V Zero Gate Voltage Collector Current -- -- 2.0 A VGE = 0V, VCE = 10V, TJ = 25C -- -- 1000 VGE = 0V, VCE = 600V, TJ = 150C Gate-to-Emitter Leakage Current -- -- 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets Eon Eoff Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- 10 -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 34 51 IC = 9.0A 4.9 7.4 nC VCC = 400V See Fig.8 14 21 VGE = 15V 28 -- 27 -- TJ = 25C ns 150 220 IC = 9.0A, VCC = 480V 100 150 VGE = 15V, RG = 50 0.15 -- Energy losses include "tail" 0.25 -- mJ See Fig. 9,10,14 0.40 0.6 -- -- s VCC = 400V, TJ = 125C VGE = 15V, RG = 50 , VCPK < 500V 28 -- TJ = 150C, 29 -- IC = 9.0A, VCC = 480V ns 190 -- VGE = 15V, RG = 50 190 -- Energy losses include "tail" 0.68 -- mJ See Fig. 11,14 0.07 -- TJ = 25C, VGE = 15V, RG = 50 0.13 -- mJ IC = 6.0A, VCC = 480V 0.20 -- Energy losses include "tail" 7.5 -- nH Measured 5mm from package 450 -- VGE = 0V 61 -- pF VCC = 30V See Fig. 7 14 -- = 1.0MHz Details of note Q through U are on the last page 2 www.irf.com IRG4BC20K 20 F o r b o th : T ria n g u la r w a ve : I 16 D uty c yc le: 50% TJ = 125 C T sink = 90C G ate drive as spec ified P o w e r D is s ip a tio n = 1 3 W Load Current ( A ) C la m p vo l ta g e : 8 0 % o f ra te d 12 S q u a re wave : 6 0 % o f ra te d v o lta g e 8 I 4 Id e al d io de s 0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 TJ = 25 o C TJ = 150 o C 10 I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 10 TJ = 150 o C TJ = 25 oC V = 50V 5s PULSE WIDTH CC 5 10 15 20 1 1 V = 15V 20s PULSE WIDTH GE 10 1 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4BC20K 20 5.0 VCE , Collector-to-Emitter Voltage(V) V = 15V 80 us PULSE WIDTH GE Maximum DC Collector Current(A) 15 4.0 I C = 18 A 10 3.0 I C = 9.0A 9A 2.0 5 I C = 4.5 A 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1 0.001 0.01 P DM t1 t2 1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC20K 800 VGE , Gate-to-Emitter Voltage (V) C, Capacitance (pF) 600 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 9.0A 16 Cies 400 12 8 200 C oes C res 4 0 1 10 100 0 0 10 20 30 40 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.5 Total Switching Losses (mJ) 0.4 Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 C 9.0A I C = 9A 10 50 RG = Ohm VGE = 15V VCC = 480V IC = 18 A 1 IC = 9.0A 9A IC = 4.5 A 0.3 0.2 0 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 R , , Gate Resistance ( ) RG G Gate Resistance (Ohm) TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4BC20K 5.0 3.0 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TJ VCC 4.0 VGE = 50 Ohm = 150 C = 480V = 15V 100 VGE = 20V T J = 125 oC 10 2.0 1.0 0.0 0 8 16 24 32 SAFE OPERATING AREA 1 40 1 10 100 1000 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4BC20K L 50V 1 00 0V VC * 0 - 480V D .U .T. RL = 480V 4 X I C@25C 480F 960V R Q * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V Q R S * Driver same type as D.U.T., VC = 480V D .U .T. VC Fig. 14a - Switching Loss Test Circuit Q R 90 % S 10 % 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 1 0% IC 5% t d (o n ) tr Eon E ts = (E o n +E o ff ) tf t=5 s E o ff www.irf.com 7 IRG4BC20K Notes: Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) S Repetitive rating; pulse width limited by maximum junction temperature. R VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 50, (See fig. 13a) T Pulse width 80s; duty factor 0.1%. U Pulse width 5.0s, single shot. Case Outline and Dimensions TO-220AB 2.8 7 (.1 1 3 ) 2.6 2 (.1 0 3 ) 1 0 .5 4 (.4 1 5 ) 1 0 .2 9 (.4 0 5 ) 3.78 (.149) 3.54 (.139) -A 6 .4 7 (.255) 6 .1 0 (.240) 1.15 (.0 45) M IN -B- 4.69 (.185) 4.20 (.165) 1.32 (.05 2) 1.22 (.04 8) 4 1 5 .2 4 (.6 0 0 ) 1 4 .8 4 (.5 8 4 ) 1 2 3 N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2. 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M IL L IM E T E R S (IN C H E S ). 4 C O N F O R M S T O J E D E C O U T L IN E T O -2 20 A B . 3X 1 4 .0 9 (.5 5 5 ) 1 3 .4 7 (.5 3 0 ) 3.96 (.1 60) 3.55 (.1 40) LEAD 1234- A S S IG N M E N T S G A TE C O L LE C T O R E M IT T E R C O L LE C T O R 4.06 (.160) 3.55 (.140) 0.93 (.037) 0.69 (.027) MBAM 1 .4 0 (.0 5 5 ) 3 X 1 .1 5 (.0 4 5 ) 2 .5 4 (.1 0 0 ) 2X 3X 3X 0.55 (.0 22) 0.46 (.0 18) 0 .3 6 (.0 1 4 ) 2.92 (.115 ) 2.64 (.104 ) CONFORMS TO JEDEC OUTLINE TO-220AB D im e n s io n s in M illim e te rs a n d (In c h e s ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 10/00 8 www.irf.com |
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